Detector

Combining purifying technique, crystal growth technique and semiconductor process technique, we have been providing solutions for various needs. We have two type of CdTe detector, one is Ohmic type, the other is Schottky type. And we can provide them in various shape and various in size. Various electrode pattern made by photo lithography like pixel or both side strips are also available. We can mount those detectors onto the various shape of substrates or housing cases.



Production process

CdTe single crystal(ingots)

Single-crystal ingots made by our THM method

Cutting (slicing machine)

Cutting ingots into relatively thick wafers (<170mm) by diamond cutter.

   

Polish (polishing machine)

Polishing wafers to enable making electrodes onto surfaces of crystals.

cutting (wire sawing machine)

Cutting ingots into wafers. Capability of up to 5mm thickness wafer.

   

Mirror wafers (3 inch diameter)

Mirror wafers by polishing surface.

Vapor (high temperature vapor machine)

Making electrodes onto polished wafers.

   

Dicing (dicing machine)

Dicing wafers having electrode into various shape detectors.

Photo lithography (yellow room)

Making patterned electrodes in yellow room. 80um pixel pitch is available now.

   

Products

CdTe element

(bare elements) Elements without electrodes. We can provide these elements in this stage.
(pixel elements) Elements having pixel electrodes made by photo lithography method. Passivation layer (AlN) is available as well

Assembly (mounting elements)

Using silver epoxy bonding, we can mount these elements to several kinds of substrates.

Special treatment tray

Special trays are available for several conditions of delivery.