We have three types of CdTe detectors:
In (Indium) and Pt (Platinum) electrodes are formed on the detectors.
Its Schottky barrier diode characteristics enable minimizing dark current by applying reverse bias.
The dark current is smallest among three.
Indium electrode (anode) cannot be patterned with photolithography; therefore, the 2D detector obtains radiographs through hole collection.
Al (Aluminium) electrodes and Pt (Platinum) electrodes are formed on the detector.
Its Schottky barrier diode characteristics enable minimizing dark current by applying reverse bias.
Al electrodes (anode) can be patterned with photolithography; therefore, the 2D detector obtains radiographs through electron collection
Patterned electrodes can be formed on both sides of a detector like cross-strip detector.
Pt (Platinum) electrodes are formed on both side of the detector.
Its Ohmic characteristics are suitable for low bias operation and long-term stable operation.
Patterned electrodes can be formed on both sides of a detector like cross-strip detector.
PATTERNED ELECTRODE
Our lithography technology enables to form patterned electrodes on CdTe detectors.
UNPATTERNED ELECTRODE
We fabricate the detector in various sizes and thicknesses as customer needs not only regular sizes but also the other thicknesses.
ASSEMBLY
We offer our CdTe detectors mounted on various substrates and carriers as per your request.
DICING CUT ELECTRODE
Not only our photolithography technology but also dicing technology enables to divide electrodes.
CdTe STANDARD PPRODUCTS
We are ready for providing various type of CdTe detectors appropriate for initial operation test and evaluation. Our stocks allows the delivery in short term.